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PD - 9.1613A
PRELIMINARY Generation V Technology l Ultra Low On-Resistance l N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l
A A D D D D
IRF7413A
HEXFET(R) Power MOSFET
1 2 8 7
S S S G
VDSS = 30V
3
6
4
5
RDS(on) = 0.0135
T op V iew
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ,TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
12 8.4 58 2.5 0.02 20 260 5.0 -55 to + 150
Units
A W
mW/C
V mJ V/ns C
Thermal Resistance Ratings
Parameter
RJA Maximum Junction-to-Ambient
Typ.
---
Max.
50
Units
C/W 8/25/97
IRF7413A
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. 30 --- --- --- 1.0 10 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.034 --- V/C Reference to 25C, ID = 1mA --- 0.0135 VGS = 10V, ID = 6.6A --- 0.020 VGS = 4.5V, ID = 3.3A --- --- V VDS = VGS , ID = 250A --- --- S VDS = 10V, ID = 3.7A --- 1.0 VDS = 24V, VGS = 0V A --- 25 VDS = 24V, VGS = 0V, TJ = 125C --- -100 VGS = -20V nA --- 100 VGS = 20V 52 79 ID = 7.3A 6.1 9.2 nC VDS = 24V 16 23 VGS = 10 V, See Fig. 6 and 9 8.6 --- VDD = 15V 50 --- ID = 7.3A ns 52 --- RG = 6.2 46 --- RD = 2.0, See Fig. 10 1800 --- VGS = 0V 680 --- pF VDS = 25V 240 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 74 200 3.1 A 58 1.0 110 300 V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 6.6A, VGS = 0V TJ = 25C, IF = 7.3A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Use IRF7413 data and test conditions Surface mounted on FR-4 board, t 10sec.
Starting TJ = 25C, L =9.8mH
RG = 25, IAS =7.3A. (See Figure 12)
ISD 7.3A, di/dt 100A/s, VDD V(BR)DSS,
TJ 150C
IRF7413A
100
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOT TOM 3. 0V T OP
100
TOP
I D , Dra in-to -S o u rce Cu rre n t (A )
I D , Dra in-to -S o u rce Cu rre n t (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
10
10
3 .0V
3 .0 V
1 0.1 1
20 s P U LSE W IDTH TJ = 25 C A
10
1 0.1 1
20 s P U LSE W IDTH TJ = 15 0C A
10
V D S , D rain-to-S ource V oltage (V )
V D S, D rain-to-S ource Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 7.3A
I D , D r ain- to-S ourc e C urre nt (A )
1.5
TJ = 1 50 C TJ = 2 5 C
10
1.0
0.5
1 3.0 3.5
VD S = 1 0 V 2 0 s PU L SE W ID TH
4.0 4.5
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T emperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRF7413A
3200 2800 2400 2000 1600 1200 800 400 0 1 10 100 0 0 10 20 30
C os s
V G S , G a te -to -S o u rc e V o lta g e (V )
V GS C is s C rs s C i ss C os s
= = = =
0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd
20
I D = 7 .3 A V DS = 2 4V V DS = 1 5V
16
C , C a p a c ita n c e (p F )
12
8
C rss
4
A
FO R TES T C IR CU IT SEE FIG U R E 9
40 50 60
A
V D S , Drain-to-Source V oltage (V)
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A)
TJ = 25C TJ = 15 0C
100
10
100us 10 1ms
1 0.4 1.2 2.0 2.8
VG S = 0 V
A
3.6
1 0.1
TA = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
V S D , Source-to-D rain V oltage (V )
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRF7413A
QG
VDS VGS
RD
10V
QGS VG QGD
D.U.T.
+
RG
- VDD
10V
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
100
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x Z thJA + TA J 0.1 1 10 100
10
0.1 0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7413A
600
15 V
EAS , Single Pulse Avalanche Energy (mJ)
TOP
500
BOTTOM
ID 3.3A 6.0A 7.3A
VDS
L
D R IV E R
400
RG 2 0V tp
D .U .T
IA S 0 .0 1
300
+ V - DD
A
200
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS tp
100
0 25 50 75 100 125 150
o Starting T J, Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
IRF7413A
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS
IRF7413A
Package Outline
SO8 Outline Dimensions are shown in millimeters (inches)
INCHES
D -B-
MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99
DIM
5
MIN .0532 .0040 .014 .0075 .189 .150
MAX .0688 .0098 .018 .0098 .196 .157
A
6 5 H 0.25 (.010) M AM
5
8 E -A-
7
A1 B C D E
1
2
3
4
e 6X
K x 45 e1 A
e e1 H K L
.050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.28 0.41 0 6.20 0.48 1.27 8
0.10 (.004) 6
-CB 8X 0.25 (.010) A1 M CASBS
L 8X
C 8X
RECOMMENDED FOOTPRINT 0.72 (.028 ) 8X
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS 6 MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006). DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.. 1.27 ( .050 ) 3X
6.46 ( .255 )
1.78 (.070) 8X
Part Marking Information
SO8
EXAM PLE : THIS IS AN IR F7101 DATE C ODE (YW W ) Y = LAST DIGIT O F THE YEAR W W = W EEK XXXX W AFER LOT C ODE (LAST 4 DIGITS)
312 INTERNATIONAL RECTIFIER LOGO F7 101
TOP
PART N UM BER
BOTTOM
IRF7413A
Tape & Reel Information
SO8 Dimensions are shown in millimeters (inches)
1.85 ( .072) 4.10 (.161 ) 1.65 ( .065) 3.90 (.154 ) 1.60 ( .062) 1.50 ( .059) 0.3 5 (.013) 0.2 5 (.010)
T ERM INAT ION NUMB ER 1
2.05 (.080) 1.95 (.077)
1
5.55 ( .218) 5.45 ( .215)
5.30 (.208) 5.10 (.201)
12.30 (.484) 11.70 (.461)
F EE D DIRECT IO N
8.10 (.318) 7.90 (.311) 6.50 (.255) 6.30 (.248)
2.60 ( .102) 1.50 ( .059) 2.20 ( .086) 2.00 ( .079)
13.2 0 (.519) 12.8 0 (.504)
15.40 ( .607) 11.90 ( .469) 2
330.00 (13.000) M AX.
50.00 (1.969) M IN.
NO T ES : 1 CO NF O RMS T O EIA- 481-1 2 INC LU DES F LANG E DIST O RT IO N @ O UT E R E DGE 3 DIM ENS IO NS ME ASURE D @ HUB 4 CO NT RO LLING DIM ENSIO N : M ET RIC
18.40 (.724) MAX 3 14.40 ( .566) 12.40 ( .448) 3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97

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